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Ordering number:ENN6154A
P-Channel Silicon MOSFET
FTS1003
Load Switching Applications
Features
* Low ON resistance. * 2.5V drive. * Mounting height 1.1mm.
Package Dimensions
unit:mm 2147A
[FTS1003]
0.65 8 5
0.5 0.95
3.0
0.425
1
4 0.25
(0.95)
1 : Drain 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Source 7 : Source 0.125 8 : Drain SANYO : TSSOP8
4.5
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1%
Conditions
6.4
Ratings -20 10 -3 -15 1.3 150 -55 to +150
Unit V V A A W C C
Mounted on a ceramic board (1000mm2x0.8mm)
Electrical Characteristics at Ta = 25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=-1mA, VGS=0 VDS=-20V, VGS=0 VGS=8V, VDS=0 VDS=-10V, ID=-1mA VDS=-10V, ID=-3A ID=-3A, VGS=-4V ID=-1A, VGS=-2.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz -0.4 5 8 70 105 600 300 150 90 144 Conditions Ratings min -20 -10 10 -1.4 typ max Unit V A A V S m m pF pF pF
Marking : S1003
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30100TS (KOTO) TA-2125 No.6154-1/4
FTS1003
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=-10V, VGS=-10V, ID=-3A VDS=-10V, VGS=-10V, ID=-3A VDS=-10V, VGS=-10V, ID=-3A IS=-3A, VGS=0 Ratings min typ 15 140 80 85 24 3 6 -1.0 -1.5 max Unit ns ns ns ns nC nC nC V
Switching Time Test Circuit
0V -4V VIN VDD=-10V ID=-3A RL=3.3 D VOUT
VIN PW=10s D.C.1%
G
FTS1003 P.G 50 S
-3.5
ID - VDS
-6V -5V -4V
-6
ID - VGS
VDS=-10V
-2
-3.0
V
-5
Drain Current, ID - A
-8V
-2.5
Drain Current, ID - A
-2.0
-2.5V -3V -3.5V
-4
-3
0 0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
0 0
-0.5
-1.0
75
-1.5
Ta
-0.5
C
-1
=-2.0
25
-1.0
VGS=-1.5V
-2
25
C
C
-1.5
-2.5
Drain-to-Source Voltage, VDS - V
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 -0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 2 3 5 7 -10
Gate-to-Source Voltage, VGS - V
200 180 160 140 120 100 80 60 40 20 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
| yf s | - I D
VDS=-10V
R DS(on) - VGS
Ta=25C ID=-3A ID=-1A
Forward Transfer Admittance, | yfs | - S
C -25 Ta= 25C C 75
Drain Current, ID - A
Static Drain-to-Source On-State Resistance, RDS(on) - m
Gate-to-Source Voltage, VGS - V
No.6154-2/4
FTS1003
200 180
R DS(on) - Ta
-10 7 5 3
I F - VSD
VGS=0
Static Drain-to-Source On-State Resistance, RDS (on) - m
160 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 160
-1A I D=
.5V =-2 VGS ,
=-4V VGS
Forward Current, IF - A
2 -1.0 7 5 3 2 -0.1 7 5 3 2
3A, I D=-
-0.01 0
-0.2
-0.4
Ta=75
-0.6
C 25C -25C
-0.8 -1.0
-1.2
-1.4
Ambient Temperature, Ta - C
10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20
Diode Forward Voltage, VSD - V
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 2 4 6 8 10 12 14 16 18 20 22 24
Ciss,Coss,Crss - VDS
f=1MHz Gate-to-Source Voltage, VGS - V
VGS - Q g
VDS=-10V ID =-3A
Ciss, Coss, Crss - pF
Ciss
Coss
Crss
Drain-to-Source Voltage, VDS - V
Total Gate Charge, Qg - nC
SW Time - I D
1000 7 5
ASO
3 2 -10 7 5
VDD =-10V VGS=-4V
IDP=-15A
Switching Time, SW Time - ns
100 7 5 3 2 10 7 5 3 2 1.0 7 -0.1 2 3 5
td(off)
Drain Current, ID - A
3 2
100s 1m s ID=-3A
DC
tr
tf
10
10 0m s
era tio
3 2 -1.0 7 5 3 2 -0.1 7 5 3 2
ms
op
td(on)
Operation in this area is limited by RDS(on).
n
7 -1.0
2
3
5
7
-10
-0.01 -0.01 2 3
Ta=25C Single pulse Mounted on a ceramic board (1000mm2x0.8mm)
5 7-0.1 23 5 7 -1.0 23 5 7 -10 23
Drain Current, ID - A
1.6
Drain-to-Source Voltage, VDS - V
P D - Ta
Allowable Power Dissipation, PD - W
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0
M
ou
nt
ed
on
ac
er
am
ic
bo
ar
d(
10
00
m
m2 x0
.8m
m
)
160
0
20
40
60
80
100
120
140
Ambient Temperature, Ta - C
No.6154-3/4
FTS1003
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice.
PS No.6154-4/4

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